Banerjee, Writam: search on Z-Library

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1

Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer

Zhao, Xiaolong, Liu, Sen, Niu, Jiebin, Liao, Lei, Liu, Qi, Xiao, Xiangheng, Lv, Hangbing, Long, Shibing, Banerjee, Writam, Li, Wenqing, Si, Shuyao, Liu, Ming

Journal:

Year:

2017

Language:

english

File:

PDF, 2.80 MB

english, 2017

2

Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors

Lu, Nianduan, Li, Ling, Banerjee, Writam, Sun, Pengxiao, Gao, Nan, Liu, Ming

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 1.85 MB

english, 2015

3

Particle Size and Morphology of Iridium Oxide Nanocrystals in Non-Volatile Memory Device

Li, Wei-Chih, Banerjee, Writam, Maikap, Siddheswar, Yang, Jer-Ren

Journal:

MATERIALS TRANSACTIONS

Year:

2011

Language:

english

File:

PDF, 3.66 MB

english, 2011

4

Intrinsic anionic rearrangement by extrinsic control: Transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM

Banerjee, Writam, Cai, Wu Fa, Zhao, Xiaolong, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming

Journal:

Year:

2017

Language:

english

File:

PDF, 4.05 MB

english, 2017

5

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

Luo, Qing, Xu, Xiaoxin, Liu, Hongtao, Lv, Hangbing, Gong, Tiancheng, Long, Shibing, Liu, Qi, Sun, Haitao, Banerjee, Writam, Li, Ling, Gao, Jianfeng, Lu, Nianduan, Liu, Ming

Journal:

Year:

2016

Language:

english

File:

PDF, 18.99 MB

english, 2016

6

Compact model for organic thin-film transistor with Gaussian density of states

Wang, Long, Lu, Nianduan, Li, Ling, Ji, Zhuoyu, Banerjee, Writam, Liu, Ming

Journal:

Year:

2015

Language:

english

File:

PDF, 3.72 MB

english, 2015

7

Evolution of 0.7 conductance anomaly in electric field driven ferromagnetic CuO junction based resistive random access memory devices

Banerjee, Writam, Hwang, Hyunsang

Journal:

Applied Physics Letters

Year:

2020

Language:

english

File:

PDF, 2.67 MB

english, 2020

8

Fully imitation synaptic metaplasticity based on memristor device

Wu, Quantan, Wang, Hong, Luo, Qing, Banerjee, Writam, Cao, Jingchen, Zhang, Xumeng, Wu, Facai, Liu, Qi, Li, Ling, Liu, Ming

Journal:

Year:

2018

Language:

english

File:

PDF, 2.20 MB

english, 2018

9

Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrO$_{x}$/AlO$_{x}$/W Cross-Point

Banerjee, Writam, Rahaman, Sk. Ziaur, Maikap, Siddheswar

Journal:

Japanese Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1.06 MB

english, 2012

10

Electric field modified Arrhenius description of charge transport in amorphous oxide semiconductor thin film transistors

Wang, Wei, Xu, Guangwei, Chowdhury, M. Delwar H., Wang, Hong, Um, Jae Kwang, Ji, Zhuoyu, Gao, Nan, Zong, Zhiwei, Bi, Chong, Lu, Congyan, Lu, Nianduan, Banerjee, Writam, Feng, Jiafeng, Li, Ling, Kadash

Journal:

Physical Review B

Year:

2018

Language:

english

File:

PDF, 1.36 MB

english, 2018

11

Physical model of Seebeck coefficient under surface dipole effect in organic thin-film transistors

Lu, Nianduan, Li, Ling, Banerjee, Writam, Liu, Ming

Journal:

Organic Electronics

Year:

2016

Language:

english

File:

PDF, 1.04 MB

english, 2016

12

A Physical Model for Dual Gate a-InGaZnO Thin Film Transistors Based on Multiple Trapping and Release Mechanism

Li, Linan, Ba, Wenqiang, Wang, Wei, Li, Ling, Xu, Guangwei, Wang, Lin gfei, Ji, Zhuoyu, Lu, Congyan, Banerjee, Writam

Journal:

Microelectronics Journal

Year:

2019

Language:

english

File:

PDF, 712 KB

english, 2019

13

Investigation of Retention Behavior of TiOₓ/Al₂O₃ Resistive Memory and Its Failure Mechanism Based on Meyer-Neldel Rule

Banerjee, Writam, Lu, Nianduan, Yang, Yang, Li, Ling, Lv, Hangbing, Liu, Qi, Long, Shibing, Liu, Ming

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.93 MB

english, 2018

14

Origin of negative resistance in anion migration controlled resistive memory

Banerjee, Writam, Wu, Facai, Hu, Yuan, Wu, Quantan, Wu, Zuheng, Liu, Qi, Liu, Ming

Journal:

Applied Physics Letters

Year:

2018

Language:

english

File:

PDF, 2.35 MB

english, 2018

15

Transformation of Threshold Volatile Switching to Quantum Point Contact Originated Nonvolatile Switching in Graphene Interface Controlled Memory Devices

Wu, Zuheng, Zhao, Xiaolong, Yang, Yang, Wang, Wei, Zhang, Xumeng, Wang, Rui, Cao, Rongrog, Liu, Qi, Banerjee, Writam

Journal:

Nanoscale Advances

Year:

2019

Language:

english

File:

PDF, 1.85 MB

english, 2019

16

Retraction: High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory

Banerjee, Writam, Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming

Journal:

Year:

2015

Language:

english

File:

PDF, 118 KB

english, 2015

17

Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory

Liu, Sen, Lu, Nianduan, Zhao, Xiaolong, Xu, Hui, Banerjee, Writam, Lv, Hangbing, Long, Shibing, Li, Qingjiang, Liu, Qi, Liu, Ming

Journal:

Advanced Materials

Year:

2016

Language:

english

File:

PDF, 3.05 MB

english, 2016

18

In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive RandomâAccessâMemory Devices

Maikap, Siddheswar, Banerjee, Writam

Journal:

Advanced Electronic Materials

Year:

2020

File:

PDF, 2.88 MB

2020

19

Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

Lv, Hangbing, Xu, Xiaoxin, Liu, Hongtao, Liu, Ruoyu, Liu, Qi, Banerjee, Writam, Sun, Haitao, Long, Shibing, Li, Ling, Liu, Ming

Journal:

Scientific Reports

Year:

2015

Language:

english

File:

PDF, 1.31 MB

english, 2015

20

A Surface Potential-Based Gate-Leakage Current Model for Organic Thin-Film Transistors

Xu, Guangwei, Wang, Wei, Wang, Long, Zong, Zhiwei, Lu, Congyan, Wang, Lingfei, Banerjee, Writam, Ji, Zhuoyu, Wang, Hong, Li, Ling, Liu, Ming

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.27 MB

english, 2015

21

Crystal that remembers: Several ways to utilize nanocrystals in resistive switching memory

Banerjee, Writam, Liu, Qi, Long, Shibing, Lv, Hangbing, Liu, Ming

Journal:

Journal of Physics D Applied Physics

Year:

2017

Language:

english

File:

PDF, 2.01 MB

english, 2017

22

Variability Improvement of TiO x /Al 2 O 3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al 2 O 3 Dielectric Material

Banerjee, Writam, Xu, Xiaoxin, Lv, Hangbing, Liu, Qi, Long, Shibing, Liu, Ming

Journal:

Year:

2017

Language:

english

File:

PDF, 7.97 MB

english, 2017

23

Engineering of defects in resistive random access memory devices

Banerjee, Writam, Liu, Qi, Hwang, Hyunsang

Journal:

Journal of Applied Physics

Year:

2020

File:

PDF, 4.99 MB

2020

24

ECS Transactions [ECS 218th ECS Meeting - Las Vegas, NV (October 10 - October 15, 2010)] - Density and Grain Size of the IrO

Li, Wei-Chih, Banerjee, Writam, Maikap, Sidhu, Yang, Jer-Ren

Year:

2010

Language:

english

File:

PDF, 609 KB

english, 2010

25

Improvement of durability and switching speed by incorporating nanocrystals in the HfO x based resistive random access memory devices

Wu, Quantan, Banerjee, Writam, Cao, Jingchen, Ji, Zhuoyu, Li, Ling, Liu, Ming

Journal:

Applied Physics Letters

Year:

2018

Language:

english

File:

PDF, 1.93 MB

english, 2018

26

Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOxnano-dots

Writam Banerjee, Siddheswar Maikap, Chao-Sung Lai, Yi-Yan Chen, Ta-Chang Tien, Heng-Yuan Lee, Wei-Su Chen, Frederick T Chen, Ming-Jer Kao, Ming-Jinn Tsai, Jer-Ren Yang

Journal:

Nanoscale Research Letters

Year:

2012

Language:

english

File:

PDF, 2.05 MB

english, 2012

27

High-$\kappa$ Al$_{2}$O$_{3}$/WO$_{x}$ Bilayer Dielectrics for Low-Power Resistive Switching Memory Applications

Banerjee, Writam, Rahaman, Sheikh Ziaur, Prakash, Amit, Maikap, Siddheswar

Journal:

Japanese Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 1.22 MB

english, 2011

28

Atomic View of Filament Growth in Electrochemical Memristive Elements

Lv, Hangbing, Xu, Xiaoxin, Sun, Pengxiao, Liu, Hongtao, Luo, Qing, Liu, Qi, Banerjee, Writam, Sun, Haitao, Long, Shibing, Li, Ling, Liu, Ming

Journal:

Scientific Reports

Year:

2015

Language:

english

File:

PDF, 1.41 MB

english, 2015

29

[IEEE 2017 7th International Symposium on Embedded Computing and System Design (ISED) - Durgapur (2017.12.18-2017.12.20)] 2017 7th International Symposium on Embedded Computing and System Design (ISED) - Three-dimensional emerging nonvolatile memory for the high-density and neuromorphic applications

Banerjee, Writam, Liu, Ming

Year:

2017

Language:

english

File:

PDF, 901 KB

english, 2017

30

Challenges and Applications of Emerging Nonvolatile Memory Devices

Banerjee, Writam

Journal:

Year:

2020

File:

PDF, 5.84 MB

2020

31

Graphene: Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer (Small 35/2017)

Zhao, Xiaolong, Liu, Sen, Niu, Jiebin, Liao, Lei, Liu, Qi, Xiao, Xiangheng, Lv, Hangbing, Long, Shibing, Banerjee, Writam, Li, Wenqing, Si, Shuyao, Liu, Ming

Journal:

Year:

2017

File:

PDF, 5.69 MB

2017

32

Complementary Switching in 3D Resistive Memory Array

Banerjee, Writam, Xu, Xiaoxin, Lv, Hangbing, Liu, Qi, Long, Shibing, Liu, Ming

Journal:

Advanced Electronic Materials

Year:

2017

Language:

english

File:

PDF, 2.19 MB

english, 2017

33

Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix

Gogurla, Narendar, Mondal, Suvra P, Sinha, Arun K, Katiyar, Ajit K, Banerjee, Writam, Kundu, Subhas C, Ray, Samit K

Journal:

Year:

2013

Language:

english

File:

PDF, 960 KB

english, 2013

34

Carrier-transport-path-induced switching parameter fluctuation in oxide-based resistive switching memory

Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Banerjee, Writam, Liu, Ming

Journal:

Materials Research Express

Year:

2015

Language:

english

File:

PDF, 1.92 MB

english, 2015

35

Understanding of SelectorâLess 1S1R Type CuâBased CBRAM Devices by Controlling SubâQuantum Filament

Banerjee, Writam, Hwang, Hyunsang

Journal:

Advanced Electronic Materials

Year:

2020

File:

PDF, 2.58 MB

2020

36

Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOxswitching materials

Amit Prakash,Siddheswar Maikap,Writam Banerjee…

Journal:

Nanoscale Research Letters

Year:

2013

Language:

english

File:

PDF, 1.25 MB

english, 2013

37

Electronic imitation of behavioral and psychological synaptic activities by the TiOx/Al2O3-based memristor devices

Banerjee, Writam, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming

Journal:

Year:

2017

Language:

english

File:

PDF, 1.96 MB

english, 2017

38

Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory

Banerjee, Writam, Xu, Xiaoxin, Liu, Hongtao, Lv, Hangbing, Liu, Qi, Sun, Haitao, Long, Shibing, Liu, Ming

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.38 MB

english, 2015

39

Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device

Sun, Haitao, Liu, Qi, Long, Shibing, Lv, Hangbing, Banerjee, Writam, Liu, Ming

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 1.22 MB

english, 2014

40

ECS Transactions [ECS 218th ECS Meeting - Las Vegas, NV (October 10 - October 15, 2010)] - Characteristics of ALD High-k HfAlO

Li, Wei-Chih, Banerjee, Writam, Maikap, Sidhu, Yang, Jer-Ren

Year:

2010

Language:

english

File:

PDF, 595 KB

english, 2010

41

A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors

Lu, Nianduan, Li, Ling, Sun, Pengxiao, Banerjee, Writam, Liu, Ming

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 807 KB

english, 2014

42

Memory Devices: Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory (Adv. Mater. 48/2016)

Liu, Sen, Lu, Nianduan, Zhao, Xiaolong, Xu, Hui, Banerjee, Writam, Lv, Hangbing, Long, Shibing, Li, Qingjiang, Liu, Qi, Liu, Ming

Journal:

Advanced Materials

Year:

2016

File:

PDF, 5.00 MB

2016

43

Retracted Article: High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory

Banerjee, Writam, Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming

Journal:

Year:

2015

Language:

english

File:

PDF, 993 KB

english, 2015

44

Design of CMOS Compatible, High-Speed, Highly-Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO 2 /Al 2 O 3 /TiO x (HAT) RRAM

Banerjee, Writam, Zhang, Xumeng, Luo, Qing, Lv, Hangbing, Liu, Qi, Long, Shibing, Liu, Ming

Journal:

Advanced Electronic Materials

Year:

2018

Language:

english

File:

PDF, 2.37 MB

english, 2018

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